Elpida Memory Inc. has announced the successful development of 512-megabit DDR2 Mobile RAM operating at an ultra-low voltage of 1.2V. The new product achieves 533Mbps high-speed with the same power consumption of DDR Mobile RAM.
DDR2 Mobile RAM from Elpida Features:
DRAM core operates at 1.2V versus 1.8V for DDR Mobile RAM
1.2V high-speed operation achieved using 70nm process technology (now in use in mass production) and new peripheral circuit technology.
Ultra-low voltage alley block and ECC circuits that use global top-level technology enabled dependable functionality with 1.2V I/O and low self-refresh current.
533Mbps high-speed functions based on the DDR2 interface
Partial alley self refresh (PASR), automatic temperature compensation self refresh (ATCSR), deep power down (DPD) and other standardized Mobile RAM special low-power functions enable a longer battery operating time.
Elpida will begin sampling its newly developed DDR2 Mobile RAM from next month. These modules are primarily for cellphones and other mobile devices.
Elpida Memory Inc. has announced the successful development of 512-megabit DDR2 Mobile RAM operating at an ultra-low voltage of 1.2V. The new product achieves 533Mbps high-speed with the same power consumption of DDR Mobile RAM.